#include "SOE.h"

void SOE_Init(void)
{
    soed_flg_firstRun = true;
}
//-------------------------------------------------------------------------
void SOE(void)
{
    uint32_T soen_V_battOcv;
    uint16_T i;

	
	// 满电能量
    if(soed_flg_firstRun)
    {
        soen_V_battOcv = 0;
        for(i = socc_pct_battSocUp ;i >= socc_pct_battSocLow + 1;i--)
        {
            soen_V_battOcv = soen_V_battOcv + look1_u16tu16(i, cmnm_pct_soc, cmnm_V_ocv, 13) * cmnc_num_cellUNum;
        }
        soed_E_fullEng = (uint16_T) ( (real_T)(soen_V_battOcv * 0.001) * (real_T)(cmnc_Q_ratedCp * 0.1) * (real_T)(sohd_pct_bcuSoh * 0.1 * 0.01)/1000);
    }
	//当前SOC的剩余能量
    if(socd_pct_battSoc > socc_pct_battSocLow)
    {
        soen_V_battOcv = 0;
        for(i = socd_pct_battSoc;i >= socc_pct_battSocLow + 1;i--)
        {
            soen_V_battOcv = soen_V_battOcv + look1_u16tu16(i, cmnm_pct_soc, cmnm_V_ocv, 13)  * cmnc_num_cellUNum;
        }
        soed_E_nowEng = (uint16_T) ( (real_T)(soen_V_battOcv * 0.001) * (real_T)(cmnc_Q_ratedCp * 0.1) * (real_T)(sohd_pct_bcuSoh * 0.1 * 0.01) /1000);
    }
    else
    {
        soed_E_nowEng = 0;
    }
    soed_pct_nowStat = (uint16_T)((uint32_T)(soed_E_nowEng * 1000)/soed_E_fullEng);
    soed_flg_firstRun = false;   
}