#include "hal_flash.h" #include "hc32_ll.h" #define HC32_FLASH_BASE 0x00 #define HC32_SECTOR_SIZE 0x2000//8kb static uint8_t internal_flash_data[HC32_SECTOR_SIZE];//最多是2K字节 int32_t hc32_flash_read(uint32_t u32Addr, uint8_t *pu8Buff, uint32_t u32Len) { return EFM_ReadByte(u32Addr,pu8Buff, u32Len); } int32_t hc32_flash_read_sector(uint32_t u32Addr) { return EFM_ReadByte(u32Addr,internal_flash_data,sizeof(internal_flash_data));//读取一个扇区的数据/8kb } int32_t hc32_flash_write(uint32_t write_addr,uint8_t *buffer,uint32_t number) { uint32_t i; uint32_t sector_page = write_addr/HC32_SECTOR_SIZE; uint32_t secpos; //扇区地址 uint32_t secoff; //扇区内偏移地址 uint32_t secremain; //扇区内剩余地址 uint32_t offaddr; //去掉0X08000000后的地址 offaddr = write_addr-HC32_FLASH_BASE; //实际偏移地址. secpos = offaddr/HC32_SECTOR_SIZE; //扇区地址 0~32 for HC32F448MTCI secoff = (offaddr%HC32_SECTOR_SIZE); //在扇区内的偏移 secremain = HC32_SECTOR_SIZE-secoff; //扇区剩余空间大小 if(number<=secremain)secremain=number; //不大于该扇区范围 LL_PERIPH_WE(LL_PERIPH_GPIO | LL_PERIPH_FCG | LL_PERIPH_PWC_CLK_RMU | LL_PERIPH_EFM | LL_PERIPH_SRAM); EFM_FWMC_Cmd(ENABLE); while(1) { /*读取当前扇区的数据*/ hc32_flash_read(secpos*HC32_SECTOR_SIZE+HC32_FLASH_BASE,internal_flash_data,sizeof(internal_flash_data)); for(i = 0;i < HC32_SECTOR_SIZE;i++) { if(internal_flash_data[i]!=0xff) break; } if(i < secremain) { EFM_SingleSectorOperateCmd(sector_page, ENABLE);//解除写保护 EFM_SectorErase(secpos*HC32_SECTOR_SIZE+HC32_FLASH_BASE); for(i=0;i(HC32_SECTOR_SIZE)) secremain=HC32_SECTOR_SIZE;//下一个扇区还是写不完 else secremain=number;//下一个扇区可以写完了 } } EFM_FWMC_Cmd(DISABLE); LL_PERIPH_WP(LL_PERIPH_GPIO | LL_PERIPH_FCG | LL_PERIPH_PWC_CLK_RMU | LL_PERIPH_EFM | LL_PERIPH_SRAM); }